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IPN60R3K4CEATMA1 Infineon Technologies MOSFET N-CH 600V 2.6A SOT223 DC16+

new&original DC 16+
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Product Attributes
TYPE DESCRIPTION SELECT
Category Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®


Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 4.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 93 pF @ 100 V
FET Feature -
Power Dissipation (Max) 5W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-3
Package / Case TO-261-4, TO-261AA
Base Product Number IPN60R3

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